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| SI7384DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0085 at VGS = 10 V 0.0125 at VGS = 4.5 V ID (A) 18 14 FEATURES * * * * Halogen-free available TrenchFET(R) Gen II Power MOSFET PWM Optimized for High Efficiency New Low Thermal Resistance PowerPAK(R) Package with Low 1.07 mm Profile * 100 % Rg Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS * High-Side DC/DC Conversion - Notebook - Desktop - Server D 6.15 mm S 1 2 3 S S 5.15 mm G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SI7384DP-T1-E3 (Lead (Pb)-free) SI7384DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 s Steady State 30 20 11 8 50 1.5 25 32 1.8 1.1 - 55 to 150 260 Unit V 18 14 4.1 A L = 0.1 mH TA = 25 C TA = 70 C mJ W C 5 3.2 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Case (Drain) t 10 s Steady State Steady State Symbol RthJA RthJC Typical 21 56 2.4 Maximum 25 70 3.0 Unit C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72656 S-80439-Rev. C, 03-Mar-08 www.vishay.com 1 SI7384DP Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.8 A, di/dt = 100 A/s VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, RG = 6 0.8 VDS = 15 V, VGS = 4.5 V, ID = 18 A 12 5.9 4.0 1.7 10 13 45 13 25 2.5 15 20 70 20 50 ns 18 nC a Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Test Conditions VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 14 A VDS = 15 V, ID = 18 A IS = 4.1 A, VGS = 0 V Min. 1.0 Typ. Max. 3.0 100 1 15 Unit V nA A A 40 0.007 0.0105 56 0.78 1.1 0.0085 0.0125 S V Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 VGS = 10 thru 5 V 40 50 40 I D - Drain Current (A) 4V I D - Drain Current (A) 30 30 20 20 TC = 125 C 10 25 C - 55 C 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 72656 S-80439-Rev. C, 03-Mar-08 SI7384DP Vishay Siliconix TYPICAL CHARACTERISTICS 0.020 25 C, unless otherwise noted 2200 Ciss R DS(on) - On-Resistance () 0.016 C - Capacitance (pF) 1760 0.012 VGS = 4.5 V 0.008 VGS = 10 V 1320 880 0.004 440 Crss Coss 0.000 0 10 20 30 40 50 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 VDS = 15 V ID = 18 A R DS(on) - On-Resistance 1.8 VGS = 10 V ID = 18 A Capacitance VGS - Gate-to-Source Voltage (V) 5 1.6 4 1.4 (Normalized) 3 1.2 2 1.0 1 0.8 0 0 3 6 9 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 60 0.030 On-Resistance vs. Junction Temperature TJ = 150 C 10 R DS(on) - On-Resistance () 0.024 I S - Source Current (A) 0.018 ID = 18 A 0.012 TJ = 25 C 0.006 1 0.00 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72656 S-80439-Rev. C, 03-Mar-08 www.vishay.com 3 SI7384DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 10 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (s) 10 100 600 TJ - Temperature (C) Power (W) 30 ID = 250 A 40 VGS(th) Variance (V) 50 20 Threshold Voltage Single Pulse Power 100 Limited by R DS(on)* 10 I D - Drain Current (A) ID(on) Limited 1 IDM Limited 10 ms 100 ms 1s 10 s 0.1 TC = 25 C Single Pulse BVDSS Limited DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 67 C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72656 S-80439-Rev. C, 03-Mar-08 SI7384DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72656. Document Number: 72656 S-80439-Rev. C, 03-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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